NTGS3455T1
20
16
12
V GS = ? 10 V
V GS = ? 9 V
V GS = ? 8 V
V GS = ? 7 V
V GS = ? 6 V
V GS = ? 5 V
20
18
16
14
12
T J = ? 55 ° C
T J = 25 ° C
T J = 125 ° C
10
8
V GS = ? 4 V
8
6
4
T J = 25 ° C
V GS = ? 3 V
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0
1
2
3
4
5
6
7
0.3
? V DS, DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
0.3
? V GS, GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.25
0.2
0.15
I D = ? 3.5 A
T J = 25 ° C
0.25
0.2
0.15
V GS = ? 4.5 V
T J = 25 ° C
V GS = ? 10 V
0.1
0.05
0.1
0.05
0
2
3
4
5
6
7
8
9
10
0
0
2
4
6
8
10
12
14
16
18
20
1.6
? V GS, GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
700
? I D, DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.4
1.2
I D = ? 3.5 A
V GS = ? 10 V
500
C iss
V GS = 0 V
T J = 25 ° C
300
1
C oss
0.8
100
C rss
0.6
? 50
? 25
0
25
50
75
100
125
150
? 100
0
5
10
15
20
25
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
? V DS, DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
相关PDF资料
NTGS4111PT2G MOSFET P-CH 30V 2.6A 6-TSOP
NTGS4141NT1G MOSFET N-CH 30V 3.5A 6-TSOP
NTGS5120PT1G MOSFET P-CH 60V 1.8A 6-TSOP
NTHC5513T1 MOSFET N/P-CH 20V 2.1A CHIPFET
NTHD2102PT1G MOSFET PWR P-CH DUAL 8V CHIPFET
NTHD2110TT1G MOSFET P-CH 12V 4.5A CHIPFET
NTHD3100CT3G MOSFET N/P-CH COMPL 20V CHIPFET
NTHD3101FT3G MOSFET P-CH 20V 3.2A CHIPFET
相关代理商/技术参数
NTGS3455T1/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOSFET -3.5 Amps, -30 Volts
NTGS3455T1_07 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:MOSFET -3.5 Amps, -30 Volts
NTGS3455T1G 功能描述:MOSFET 30V 3.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS4111P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET (-30 V, -4.7 A, Single P-Channel, TSOP-6)
NTGS4111PT1 功能描述:MOSFET -30V -4.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS4111PT1G 功能描述:MOSFET -30V -4.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS4111PT2G 功能描述:MOSFET PFET 4.7A 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS4141N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 7.0 A, Single N−Channel, TSOP−6